Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology

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Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2000-07, Vol.369 (1-2), p.199-202
Hauptverfasser:	SUGIYAMA, N, MIZUNO, T, TAKAGI, S, KOIKE, M, KUROBE, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Deposition technology Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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