'Semi-insulating' silicon using deep level impurity doping: problems and potential

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Semiconductor science and technology 2003-06, Vol.18 (6), p.517-524
Hauptverfasser:	Mallik, Kanad, Falster, R J, Wilshaw, P R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Electron states Electronic transport in condensed matter Elemental semiconductors Exact sciences and technology Impurity and defect levels Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	524
container_issue	6
container_start_page	517
container_title	Semiconductor science and technology
container_volume	18
creator	Mallik, Kanad Falster, R J Wilshaw, P R
description
doi_str_mv	10.1088/0268-1242/18/6/321
format	Article
fullrecord	<record><control><sourceid>pascalfrancis_iop_p</sourceid><recordid>TN_cdi_pascalfrancis_primary_14843109</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>14843109</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-3462aedfe7faf64776b5cff346f07496a0a793ca15f17ed8334a806cdd27108b3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKt_wFMuUjysm9mkSepNil9QEPw4hzQfEkl3w2Yr9N-bUqmHgqdh5n3eYd5B6BLIDRApa9JwWUHDmhpkzWvawBEaAeVQcc7gGI32wCk6y_mLEABJyQi9Tt7cKlShzeuoh9B-TnAOMZiuxetcWmydSzi6bxdxWKV1H4YNtl0q0i1OfbeMbpWxbi1O3eDaIeh4jk68jtld_NYx-ni4f58_VYuXx-f53aIylImhoow32lnvhNeeMyH4cmq8L2NPBJtxTbSYUaNh6kE4KyllWhJurG1EybykY9Ts9pq-y7l3XqU-rHS_UUDU9itqG1ptQyuQiqvylWK62pmSzkZH3-vWhPznZJJRILPCXe-40KW9erhPJesLWx2y_9zwA5ftfQc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>'Semi-insulating' silicon using deep level impurity doping: problems and potential</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Mallik, Kanad ; Falster, R J ; Wilshaw, P R</creator><creatorcontrib>Mallik, Kanad ; Falster, R J ; Wilshaw, P R</creatorcontrib><identifier>ISSN: 0268-1242</identifier><identifier>EISSN: 1361-6641</identifier><identifier>DOI: 10.1088/0268-1242/18/6/321</identifier><identifier>CODEN: SSTEET</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity of specific materials ; Electron states ; Electronic transport in condensed matter ; Elemental semiconductors ; Exact sciences and technology ; Impurity and defect levels ; Physics</subject><ispartof>Semiconductor science and technology, 2003-06, Vol.18 (6), p.517-524</ispartof><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-3462aedfe7faf64776b5cff346f07496a0a793ca15f17ed8334a806cdd27108b3</citedby><cites>FETCH-LOGICAL-c347t-3462aedfe7faf64776b5cff346f07496a0a793ca15f17ed8334a806cdd27108b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0268-1242/18/6/321/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53830,53910</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14843109$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mallik, Kanad</creatorcontrib><creatorcontrib>Falster, R J</creatorcontrib><creatorcontrib>Wilshaw, P R</creatorcontrib><title>'Semi-insulating' silicon using deep level impurity doping: problems and potential</title><title>Semiconductor science and technology</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity of specific materials</subject><subject>Electron states</subject><subject>Electronic transport in condensed matter</subject><subject>Elemental semiconductors</subject><subject>Exact sciences and technology</subject><subject>Impurity and defect levels</subject><subject>Physics</subject><issn>0268-1242</issn><issn>1361-6641</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKt_wFMuUjysm9mkSepNil9QEPw4hzQfEkl3w2Yr9N-bUqmHgqdh5n3eYd5B6BLIDRApa9JwWUHDmhpkzWvawBEaAeVQcc7gGI32wCk6y_mLEABJyQi9Tt7cKlShzeuoh9B-TnAOMZiuxetcWmydSzi6bxdxWKV1H4YNtl0q0i1OfbeMbpWxbi1O3eDaIeh4jk68jtld_NYx-ni4f58_VYuXx-f53aIylImhoow32lnvhNeeMyH4cmq8L2NPBJtxTbSYUaNh6kE4KyllWhJurG1EybykY9Ts9pq-y7l3XqU-rHS_UUDU9itqG1ptQyuQiqvylWK62pmSzkZH3-vWhPznZJJRILPCXe-40KW9erhPJesLWx2y_9zwA5ftfQc</recordid><startdate>20030601</startdate><enddate>20030601</enddate><creator>Mallik, Kanad</creator><creator>Falster, R J</creator><creator>Wilshaw, P R</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030601</creationdate><title>'Semi-insulating' silicon using deep level impurity doping: problems and potential</title><author>Mallik, Kanad ; Falster, R J ; Wilshaw, P R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-3462aedfe7faf64776b5cff346f07496a0a793ca15f17ed8334a806cdd27108b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity of specific materials</topic><topic>Electron states</topic><topic>Electronic transport in condensed matter</topic><topic>Elemental semiconductors</topic><topic>Exact sciences and technology</topic><topic>Impurity and defect levels</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mallik, Kanad</creatorcontrib><creatorcontrib>Falster, R J</creatorcontrib><creatorcontrib>Wilshaw, P R</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Semiconductor science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mallik, Kanad</au><au>Falster, R J</au><au>Wilshaw, P R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>'Semi-insulating' silicon using deep level impurity doping: problems and potential</atitle><jtitle>Semiconductor science and technology</jtitle><date>2003-06-01</date><risdate>2003</risdate><volume>18</volume><issue>6</issue><spage>517</spage><epage>524</epage><pages>517-524</pages><issn>0268-1242</issn><eissn>1361-6641</eissn><coden>SSTEET</coden><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0268-1242/18/6/321</doi><tpages>8</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0268-1242
ispartof	Semiconductor science and technology, 2003-06, Vol.18 (6), p.517-524
issn	0268-1242 1361-6641
language	eng
recordid	cdi_pascalfrancis_primary_14843109
source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Electron states Electronic transport in condensed matter Elemental semiconductors Exact sciences and technology Impurity and defect levels Physics
title	'Semi-insulating' silicon using deep level impurity doping: problems and potential
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T15%3A47%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_iop_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle='Semi-insulating'%20silicon%20using%20deep%20level%20impurity%20doping:%20problems%20and%20potential&rft.jtitle=Semiconductor%20science%20and%20technology&rft.au=Mallik,%20Kanad&rft.date=2003-06-01&rft.volume=18&rft.issue=6&rft.spage=517&rft.epage=524&rft.pages=517-524&rft.issn=0268-1242&rft.eissn=1361-6641&rft.coden=SSTEET&rft_id=info:doi/10.1088/0268-1242/18/6/321&rft_dat=%3Cpascalfrancis_iop_p%3E14843109%3C/pascalfrancis_iop_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true