Boron-content dependence of Fano resonances in p-type silicon

We present a study of Fano-type resonances in high quality boron-doped silicon as a function of boron content. The resonance (antiresonance) in the infrared absorption spectra occurs close to the k #~ 0 optical phonon at 519 cm-1. The interaction between the otherwise infrared-forbidden optical phon...

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Veröffentlicht in:	Journal of physics. Condensed matter 2003-05, Vol.15 (17), p.2923-2931
Hauptverfasser:	Gajić, R, Braun, D, Kuchar, F, Golubović, A, Korntner, R, Löschner, H, Butschke, J, Springer, R, Letzkus, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Elemental semiconductors and insulators Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Semiconductors Visible and ultraviolet spectra
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Beschreibung
Zusammenfassung:	We present a study of Fano-type resonances in high quality boron-doped silicon as a function of boron content. The resonance (antiresonance) in the infrared absorption spectra occurs close to the k #~ 0 optical phonon at 519 cm-1. The interaction between the otherwise infrared-forbidden optical phonon and the continuum states of the acceptor was analysed based on a modified Fano model that involves the interaction of a discrete state with two continua.
ISSN:	0953-8984 1361-648X
DOI:	10.1088/0953-8984/15/17/340