Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates
Reports on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cut...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2003-03, Vol.13 (3), p.93-95 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Schwindt, R.S. Kumar, V. Kuliev, A. Simin, G. Yang, J.W. Khan, M.A. Muir, M.E. Adesida, I. |
| description | Reports on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f T ) of 65 GHz, and maximum frequency of oscillation (f max ) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices. |
| doi_str_mv | 10.1109/LMWC.2003.810115 |
| format | Article |
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The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f T ) of 65 GHz, and maximum frequency of oscillation (f max ) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.</description><identifier>ISSN: 1531-1309</identifier><identifier>EISSN: 1558-1764</identifier><identifier>DOI: 10.1109/LMWC.2003.810115</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum gallium nitrides ; Applied sciences ; Compressing ; Current density ; Devices ; Electronics ; Exact sciences and technology ; Gallium nitride ; Gallium nitrides ; HEMTs ; High electron mobility transistors ; Microwave and submillimeter wave devices, electron transfer devices ; Microwaves ; Millimeter wave transistors ; MOCVD ; MODFETs ; Power generation ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon carbide ; Transconductance</subject><ispartof>IEEE microwave and wireless components letters, 2003-03, Vol.13 (3), p.93-95</ispartof><rights>2003 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1187392$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1187392$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14606277$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Schwindt, R.S.</creatorcontrib><creatorcontrib>Kumar, V.</creatorcontrib><creatorcontrib>Kuliev, A.</creatorcontrib><creatorcontrib>Simin, G.</creatorcontrib><creatorcontrib>Yang, J.W.</creatorcontrib><creatorcontrib>Khan, M.A.</creatorcontrib><creatorcontrib>Muir, M.E.</creatorcontrib><creatorcontrib>Adesida, I.</creatorcontrib><title>Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>Reports on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f T ) of 65 GHz, and maximum frequency of oscillation (f max ) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.</description><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Compressing</subject><subject>Current density</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>Microwaves</subject><subject>Millimeter wave transistors</subject><subject>MOCVD</subject><subject>MODFETs</subject><subject>Power generation</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon carbide</subject><subject>Transconductance</subject><issn>1531-1309</issn><issn>1558-1764</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFzs9Kw0AQBvAgCtbqXfCyF_G06c7-S_ZYQm2FVhErHsN2s2lXNknNphbfzWfwmYy04GGYD-bHx0TRNZAYgKjRfPGWxZQQFqdAAMRJNAAhUgyJ5Kd_mQEGRtR5dBHCOyHAUw6D6HnhvHeV7WyL9_rToo1bb_C22dsWkZgK_PNdobXuLPa2XncbNPZT_TjqB80mi2VATY1eXIbCbhW6tnfhMjortQ_26riH0ev9ZJnN8Pxp-pCN59hRJjpcFKALbowpEqmI7j-nOi2oFkaUJZGWSc2lNaC0LSnjCUuFYBzoaqWk6BEbRneH3m3bfOxs6PLKBWO917VtdiFXBBIqUql6eXuUOhjty1bXxoV827pKt185cEkkTZLe3Rycs9b-nyFNmKLsFxOLZ4E</recordid><startdate>20030301</startdate><enddate>20030301</enddate><creator>Schwindt, R.S.</creator><creator>Kumar, V.</creator><creator>Kuliev, A.</creator><creator>Simin, G.</creator><creator>Yang, J.W.</creator><creator>Khan, M.A.</creator><creator>Muir, M.E.</creator><creator>Adesida, I.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20030301</creationdate><title>Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates</title><author>Schwindt, R.S. ; Kumar, V. ; Kuliev, A. ; Simin, G. ; Yang, J.W. ; Khan, M.A. ; Muir, M.E. ; Adesida, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i235t-dd1ad4cccd7690a2002a8d2a5c5ff06e36a46ec19aef234738553412bb9655c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Applied sciences</topic><topic>Compressing</topic><topic>Current density</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Microwave and submillimeter wave devices, electron transfer devices</topic><topic>Microwaves</topic><topic>Millimeter wave transistors</topic><topic>MOCVD</topic><topic>MODFETs</topic><topic>Power generation</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. 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Solid state devices</topic><topic>Silicon carbide</topic><topic>Transconductance</topic><toplevel>online_resources</toplevel><creatorcontrib>Schwindt, R.S.</creatorcontrib><creatorcontrib>Kumar, V.</creatorcontrib><creatorcontrib>Kuliev, A.</creatorcontrib><creatorcontrib>Simin, G.</creatorcontrib><creatorcontrib>Yang, J.W.</creatorcontrib><creatorcontrib>Khan, M.A.</creatorcontrib><creatorcontrib>Muir, M.E.</creatorcontrib><creatorcontrib>Adesida, I.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schwindt, R.S.</au><au>Kumar, V.</au><au>Kuliev, A.</au><au>Simin, G.</au><au>Yang, J.W.</au><au>Khan, M.A.</au><au>Muir, M.E.</au><au>Adesida, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2003-03-01</date><risdate>2003</risdate><volume>13</volume><issue>3</issue><spage>93</spage><epage>95</epage><pages>93-95</pages><issn>1531-1309</issn><eissn>1558-1764</eissn><coden>IMWCBJ</coden><abstract>Reports on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f T ) of 65 GHz, and maximum frequency of oscillation (f max ) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2003.810115</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Compressing Current density Devices Electronics Exact sciences and technology Gallium nitride Gallium nitrides HEMTs High electron mobility transistors Microwave and submillimeter wave devices, electron transfer devices Microwaves Millimeter wave transistors MOCVD MODFETs Power generation Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Transconductance |
| title | Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates |
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