Specific behaviour of stress relaxation in GexSi1−x films grown on porous silicon based mesa substrates: computer calculations
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| Veröffentlicht in: | Semiconductor science and technology 2003-01, Vol.18 (1), p.39-44 |
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| container_end_page | 44 |
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| container_issue | 1 |
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| container_title | Semiconductor science and technology |
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| creator | Novikov, P L Bolkhovityanov, Yu B Pchelyakov, O P Romanov, S I Sokolov, L V |
| description | |
| doi_str_mv | 10.1088/0268-1242/18/1/306 |
| format | Article |
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| ispartof | Semiconductor science and technology, 2003-01, Vol.18 (1), p.39-44 |
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| language | eng |
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| source | HEAL-Link subscriptions: Institute of Physics (IOP) Journals; Institute of Physics Journals |
| title | Specific behaviour of stress relaxation in GexSi1−x films grown on porous silicon based mesa substrates: computer calculations |
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