Gain and threshold-current calculation of V-groove quantum-wire InGaAs-InP laser

Gain and threshold-current calculation of V-groove quantum-wire InGaAs-InP laser

This paper presents material-gain and threshold-current calculation of a InGaAs-InP quantum-wire laser in the framework of the k/sub /spl middot//p method, with included conduction-band nonparabolicity for the first time. The method for band-structure calculation is based on conformal mapping and Fo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of quantum electronics 2002-12, Vol.38 (12), p.1565-1579
Hauptverfasser: Gvozdic, D.M., Nenadovic, N.M., Schlachetzki, A.
Format: Artikel
Sprache:eng
Schlagworte:
Band structure of solids
Efficiency, stability, gain, and other operational parameters
Exact sciences and technology
Fourier analysis
Fundamental areas of phenomenology (including applications)
Gain
Laser optical systems: design and operation
Laser theory
Lasers
Mathematical analysis
Optical fiber communication
Optical materials
Optical modulation
Optical sensors
Optical transmitters
Optics
Orbital calculations
Physics
Quantum electronics
Quantum well lasers
Quantum wires
Semiconductor lasers
laser diodes
Stacks
Threshold current
Wire
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents material-gain and threshold-current calculation of a InGaAs-InP quantum-wire laser in the framework of the k/sub /spl middot//p method, with included conduction-band nonparabolicity for the first time. The method for band-structure calculation is based on conformal mapping and Fourier expansion. The calculation shows that high material gain (7000 cm/sup -1/) can be achieved at room temperature for polarization along the free axis of the quantum wire. We propose an optimized laser structure, based on a stack of quantum wires.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2002.805106