Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling

Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling

We analyze strain-induced effects on the capacitance-voltage (C-V) profile for an MBE-grown GaAs/In(0.1)Ga(0.9)As/GaAs HFET structure. The calculations of C-V profile were made using a new small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanotechnology 2001-12, Vol.12 (4), p.500-503
Hauptverfasser: Kokorev, M F, Maleev, N A, Pakhnin, D V, Zhukov, A E, Ustinov, V M
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 503
container_issue 4
container_start_page 500
container_title Nanotechnology
container_volume 12
creator Kokorev, M F
Maleev, N A
Pakhnin, D V
Zhukov, A E
Ustinov, V M
description We analyze strain-induced effects on the capacitance-voltage (C-V) profile for an MBE-grown GaAs/In(0.1)Ga(0.9)As/GaAs HFET structure. The calculations of C-V profile were made using a new small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile. (Author)
doi_str_mv 10.1088/0957-4484/12/4/324
format Article
fullrecord <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_14166858</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26660892</sourcerecordid><originalsourceid>FETCH-LOGICAL-c329t-7c2b7d9efcb2fe3ce6924950a8b96024a4f91b9c8023094155890bb73694e7593</originalsourceid><addsrcrecordid>eNqNkEFPwyAYhonRxDn9A564aOKhFiilcFwa3UyWeFGvhFIwmI7WQhP999Js0cMuXviAPO_7JQ8A1xjdY8R5jkRZZZRymmOS07wg9AQscMFwxkrCT8HiFzgHFyF8IIQxJ3gBYt3vhimq6HqvOqh8C83XYEa3Mz6mjxCn1pkAe5-uo3I-c76dtEmYtUbHAJ2HCj75tVqFfD7g5vHhZYYnHafRwCk4_w7r7A0OY29dl16X4MyqLpirw1yC15SpN9n2ef1Ur7aZLoiIWaVJU7XCWN0QawptmCBUlEjxRjBEqKJW4EZojkiBBMVlyQVqmqpggpqqFMUS3O570-bPyYQody5o03XKm34KkjDGEBckgWQP6rEPYTRWDsmAGr8lRnIWLGd_cvYnMZFUJsEpdHNoV0Grzo7Kaxf-khQzxkueuGzPuX74X-_dMX_MyaG1xQ-eo5Vv</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26660892</pqid></control><display><type>article</type><title>Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Kokorev, M F ; Maleev, N A ; Pakhnin, D V ; Zhukov, A E ; Ustinov, V M</creator><creatorcontrib>Kokorev, M F ; Maleev, N A ; Pakhnin, D V ; Zhukov, A E ; Ustinov, V M</creatorcontrib><description>We analyze strain-induced effects on the capacitance-voltage (C-V) profile for an MBE-grown GaAs/In(0.1)Ga(0.9)As/GaAs HFET structure. The calculations of C-V profile were made using a new small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile. (Author)</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/0957-4484/12/4/324</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><ispartof>Nanotechnology, 2001-12, Vol.12 (4), p.500-503</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c329t-7c2b7d9efcb2fe3ce6924950a8b96024a4f91b9c8023094155890bb73694e7593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0957-4484/12/4/324/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>309,310,314,776,780,785,786,23910,23911,25119,27903,27904,53808,53888</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=14166858$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kokorev, M F</creatorcontrib><creatorcontrib>Maleev, N A</creatorcontrib><creatorcontrib>Pakhnin, D V</creatorcontrib><creatorcontrib>Zhukov, A E</creatorcontrib><creatorcontrib>Ustinov, V M</creatorcontrib><title>Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling</title><title>Nanotechnology</title><description>We analyze strain-induced effects on the capacitance-voltage (C-V) profile for an MBE-grown GaAs/In(0.1)Ga(0.9)As/GaAs HFET structure. The calculations of C-V profile were made using a new small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile. (Author)</description><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqNkEFPwyAYhonRxDn9A564aOKhFiilcFwa3UyWeFGvhFIwmI7WQhP999Js0cMuXviAPO_7JQ8A1xjdY8R5jkRZZZRymmOS07wg9AQscMFwxkrCT8HiFzgHFyF8IIQxJ3gBYt3vhimq6HqvOqh8C83XYEa3Mz6mjxCn1pkAe5-uo3I-c76dtEmYtUbHAJ2HCj75tVqFfD7g5vHhZYYnHafRwCk4_w7r7A0OY29dl16X4MyqLpirw1yC15SpN9n2ef1Ur7aZLoiIWaVJU7XCWN0QawptmCBUlEjxRjBEqKJW4EZojkiBBMVlyQVqmqpggpqqFMUS3O570-bPyYQody5o03XKm34KkjDGEBckgWQP6rEPYTRWDsmAGr8lRnIWLGd_cvYnMZFUJsEpdHNoV0Grzo7Kaxf-khQzxkueuGzPuX74X-_dMX_MyaG1xQ-eo5Vv</recordid><startdate>20011201</startdate><enddate>20011201</enddate><creator>Kokorev, M F</creator><creator>Maleev, N A</creator><creator>Pakhnin, D V</creator><creator>Zhukov, A E</creator><creator>Ustinov, V M</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20011201</creationdate><title>Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling</title><author>Kokorev, M F ; Maleev, N A ; Pakhnin, D V ; Zhukov, A E ; Ustinov, V M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-7c2b7d9efcb2fe3ce6924950a8b96024a4f91b9c8023094155890bb73694e7593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kokorev, M F</creatorcontrib><creatorcontrib>Maleev, N A</creatorcontrib><creatorcontrib>Pakhnin, D V</creatorcontrib><creatorcontrib>Zhukov, A E</creatorcontrib><creatorcontrib>Ustinov, V M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kokorev, M F</au><au>Maleev, N A</au><au>Pakhnin, D V</au><au>Zhukov, A E</au><au>Ustinov, V M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling</atitle><jtitle>Nanotechnology</jtitle><date>2001-12-01</date><risdate>2001</risdate><volume>12</volume><issue>4</issue><spage>500</spage><epage>503</epage><pages>500-503</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><abstract>We analyze strain-induced effects on the capacitance-voltage (C-V) profile for an MBE-grown GaAs/In(0.1)Ga(0.9)As/GaAs HFET structure. The calculations of C-V profile were made using a new small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile. (Author)</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0957-4484/12/4/324</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0957-4484
ispartof Nanotechnology, 2001-12, Vol.12 (4), p.500-503
issn 0957-4484
1361-6528
language eng
recordid cdi_pascalfrancis_primary_14166858
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T15%3A12%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Computational%20and%20experimental%20studies%20on%20strain-induced%20effects%20in%20a%20InGaAs/GaAs%20HFET%20structure%20using%20C-V%20profiling&rft.jtitle=Nanotechnology&rft.au=Kokorev,%20M%20F&rft.date=2001-12-01&rft.volume=12&rft.issue=4&rft.spage=500&rft.epage=503&rft.pages=500-503&rft.issn=0957-4484&rft.eissn=1361-6528&rft_id=info:doi/10.1088/0957-4484/12/4/324&rft_dat=%3Cproquest_pasca%3E26660892%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26660892&rft_id=info:pmid/&rfr_iscdi=true