Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure using C-V profiling

We analyze strain-induced effects on the capacitance-voltage (C-V) profile for an MBE-grown GaAs/In(0.1)Ga(0.9)As/GaAs HFET structure. The calculations of C-V profile were made using a new small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile. (Author)