Proximity correction simulations in ultra-high resolution x-ray lithography

Proximity correction simulations in ultra-high resolution x-ray lithography

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2001-11, Vol.34 (22), p.3209-3213
Hauptverfasser: Bourdillon, A J, Boothroyd, C B
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 3213
container_issue 22
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container_title Journal of physics. D, Applied physics
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creator Bourdillon, A J
Boothroyd, C B
description
doi_str_mv 10.1088/0022-3727/34/22/301
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Proximity correction simulations in ultra-high resolution x-ray lithography
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