Epitaxial lateral overgrowth of GaN: Interfaces and defects at atomic level
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| Veröffentlicht in: | Physica status solidi. B. Basic research 2001, Vol.227 (1), p.1-43 |
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| container_title | Physica status solidi. B. Basic research |
| container_volume | 227 |
| creator | BEAUMONT, B VENNEGUES, Ph GIBART, P |
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| format | Article |
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B. Basic research, 2001, Vol.227 (1), p.1-43</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14063485$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>BEAUMONT, B</creatorcontrib><creatorcontrib>VENNEGUES, Ph</creatorcontrib><creatorcontrib>GIBART, P</creatorcontrib><title>Epitaxial lateral overgrowth of GaN: Interfaces and defects at atomic level</title><title>Physica status solidi. B. 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| fulltext | fulltext |
| identifier | ISSN: 0370-1972 |
| ispartof | Physica status solidi. B. Basic research, 2001, Vol.227 (1), p.1-43 |
| issn | 0370-1972 1521-3951 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_14063485 |
| source | Access via Wiley Online Library |
| subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Vacuum deposition |
| title | Epitaxial lateral overgrowth of GaN: Interfaces and defects at atomic level |
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