PdGe-based ohmic contacts to high-low doped n-GaAs with and without undoped cap layer

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2000-07, Vol.33 (13), p.1611-1614
Hauptverfasser:	Lim, Jong-Won, Mun, Jae-Kyoung, Nam, Sungun, Kwak, Myeong-Hyeon, Kim, Haecheon, Song, Min-Kyu, Ma, Dong Sung
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Contact resistance, contact potential Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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