Effect of diffusion barrier in the thermally annealed exchange-biased IrMn-CoFe electrode in magnetic tunnel junctions

Exchange-biased electrodes IrMn/Ta(2 /spl Aring/)/CoFe/AlO/sub x/ and IrMn/CoFe/Ta(2 /spl Aring/)-AlO/sub x/ used in a magnetic tunnel junction were annealed at 300/spl deg/C to study the Mn diffusion characteristics. Auger electron spectroscopy and X-ray photoelectron spectroscopy analysis of the a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on magnetics 2002-09, Vol.38 (5), p.2715-2717
Hauptverfasser:	Chung-sik Yoo, Jeong, H.D., Lee, J.H., Yoon, C.S., Kim, C.K., Yuh, J.H., Ando, Y., Kubota, H., Miyazaki, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Argon Electrodes Electronics Electrons Exact sciences and technology Magnetic devices Magnetic materials Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetic tunneling Magnetism Oxidation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spectroscopy Sputtering Tunneling magnetoresistance
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Exchange-biased electrodes IrMn/Ta(2 /spl Aring/)/CoFe/AlO/sub x/ and IrMn/CoFe/Ta(2 /spl Aring/)-AlO/sub x/ used in a magnetic tunnel junction were annealed at 300/spl deg/C to study the Mn diffusion characteristics. Auger electron spectroscopy and X-ray photoelectron spectroscopy analysis of the annealed electrodes show that the Ta diffusion barrier effectively blocked the Mn migration, regardless of the barrier location. Also concluded from the study was that the Mn migration is largely enhanced by the preferential oxidation of Mn.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/TMAG.2002.803168