Photoconductance in magnetic tunnel junctions

The photoconductance of magnetic tunnel junctions has been studied in order to obtain directly determined values of the tunnel barrier height. Experiments for different types of junctions show that the presence of an aluminum layer close to the oxide barrier is crucial for the observation of a large...

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Veröffentlicht in:	IEEE transactions on magnetics 2002-09, Vol.38 (5), p.2712-2714
Hauptverfasser:	Koller, P.H.P., Vanhelmont, F.W.M., Coehoorn, R., de Jonge, W.J.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied sciences Electrodes Electronics Electrons Exact sciences and technology Geometry Iron Magnetic devices Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetic tunneling Magnetism Oxidation Photoconducting materials Photoconductivity Plasma materials processing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	The photoconductance of magnetic tunnel junctions has been studied in order to obtain directly determined values of the tunnel barrier height. Experiments for different types of junctions show that the presence of an aluminum layer close to the oxide barrier is crucial for the observation of a large photocurrent. For Ni/sub 80/Fe/sub 20/-based magnetic tunnel junctions, the effective barrier height increases with increasing magnetic layer thickness between the aluminum source layer and the aluminum oxide barrier. This trend is also visible in the barrier height determined from a Simmons fit to the current-voltage characteristics.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/TMAG.2002.803171