Study of the NiTi/SiO2 interface: analysis of the electronic distributions

We present a study of the interface between a NiTi film deposited by magnetron d.c. sputtering and a SiO2 film obtained by thermal oxidation. Electron‐induced X‐ray emission spectroscopy (EXES) is used to characterize the physicochemical environment around the Si atoms at the NiTi/SiO2 interface, an...

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Veröffentlicht in:	Surface and interface analysis 2002-08, Vol.34 (1), p.694-697
Hauptverfasser:	Jarrige, Ignace, Jonnard, Philippe, Frantz-Rodriguez, Nadège, Danaie, Kamran, Bosseboeuf, Alain
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Composition defects and impurities Condensed matter: structure, mechanical and thermal properties Diffusion interface formation Exact sciences and technology Metals. Metallurgy NiTi Physics silicide SiO2 Solid surfaces and solid-solid interfaces solid/solid interface Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) valence states x-ray emission spectroscopy
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Beschreibung
Zusammenfassung:	We present a study of the interface between a NiTi film deposited by magnetron d.c. sputtering and a SiO2 film obtained by thermal oxidation. Electron‐induced X‐ray emission spectroscopy (EXES) is used to characterize the physicochemical environment around the Si atoms at the NiTi/SiO2 interface, and to obtain information about the interfacial reactivity. From analysis of the Si 3p valence states, the composition and the thickness of the interfacial zone before and after annealing are deduced. The composition of the passivation layer, located at the surface of the metallic film, is determined by EXES and X‐ray Photoelectron Spectroscopy. Copyright © 2002 John Wiley & Sons, Ltd.
ISSN:	0142-2421 1096-9918
DOI:	10.1002/sia.1390