Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects
Gespeichert in:
| Veröffentlicht in: | Journal of the Electrochemical Society 2002-08, Vol.149 (8), p.G441-G445 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | G445 |
|---|---|
| container_issue | 8 |
| container_start_page | G441 |
| container_title | Journal of the Electrochemical Society |
| container_volume | 149 |
| creator | PARK, Sang-Wook KIM, Dong-Jin YANG, Hong-Seon LEE, Chan-Ho LEE, Seung-Cheol KWAK, Noh-Yeal SHIN, Seung-Woo PARK, Jeong-Hwan SUH, Min-Suk KONG, Young-Taek DONG, Cha-Deok |
| description | |
| doi_str_mv | 10.1149/1.1485083 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_13845526</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>13845526</sourcerecordid><originalsourceid>FETCH-LOGICAL-p185t-f93a0e395b756a1f1ae5c71ceb0c898ea48bc9f3b9a789912090e32299f693593</originalsourceid><addsrcrecordid>eNotT8tKAzEUDaJgfSz8g2xcTp07mXQSd1p8QaVCFZflNnPTRqbJkKRgv8GfdoquDofz4jB2BeUYoNY3MIZayVKJIzYCXcuiAYBjNipLEEU9kXDKzlL6Giiouhmxn_sQg-c5ok99iJnnTQy79YanXbRoiJsNek8d71_nC75Lzq_5Z9GHbs-3lLHja8zEqSOTY2jplr8dpIXjbegPXhN867IbJtC33LscneHh27U0bBLmLfnMydohny7YicUu0eU_nrOPx4f36XMxmz-9TO9mRQ9K5sJqgSUJLVeNnCBYQJKmAUOr0iitCGu1MtqKlcZGaQ1VqQd7VWltJ1pILc7Z9V9vj8lgZ4fvxqVlH90W434JQtVSVhPxC9SjZlY</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects</title><source>IOP Publishing Journals</source><creator>PARK, Sang-Wook ; KIM, Dong-Jin ; YANG, Hong-Seon ; LEE, Chan-Ho ; LEE, Seung-Cheol ; KWAK, Noh-Yeal ; SHIN, Seung-Woo ; PARK, Jeong-Hwan ; SUH, Min-Suk ; KONG, Young-Taek ; DONG, Cha-Deok</creator><creatorcontrib>PARK, Sang-Wook ; KIM, Dong-Jin ; YANG, Hong-Seon ; LEE, Chan-Ho ; LEE, Seung-Cheol ; KWAK, Noh-Yeal ; SHIN, Seung-Woo ; PARK, Jeong-Hwan ; SUH, Min-Suk ; KONG, Young-Taek ; DONG, Cha-Deok</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1485083</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Metal-semiconductor-metal structures ; Physics</subject><ispartof>Journal of the Electrochemical Society, 2002-08, Vol.149 (8), p.G441-G445</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=13845526$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PARK, Sang-Wook</creatorcontrib><creatorcontrib>KIM, Dong-Jin</creatorcontrib><creatorcontrib>YANG, Hong-Seon</creatorcontrib><creatorcontrib>LEE, Chan-Ho</creatorcontrib><creatorcontrib>LEE, Seung-Cheol</creatorcontrib><creatorcontrib>KWAK, Noh-Yeal</creatorcontrib><creatorcontrib>SHIN, Seung-Woo</creatorcontrib><creatorcontrib>PARK, Jeong-Hwan</creatorcontrib><creatorcontrib>SUH, Min-Suk</creatorcontrib><creatorcontrib>KONG, Young-Taek</creatorcontrib><creatorcontrib>DONG, Cha-Deok</creatorcontrib><title>Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects</title><title>Journal of the Electrochemical Society</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Metal-semiconductor-metal structures</subject><subject>Physics</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotT8tKAzEUDaJgfSz8g2xcTp07mXQSd1p8QaVCFZflNnPTRqbJkKRgv8GfdoquDofz4jB2BeUYoNY3MIZayVKJIzYCXcuiAYBjNipLEEU9kXDKzlL6Giiouhmxn_sQg-c5ok99iJnnTQy79YanXbRoiJsNek8d71_nC75Lzq_5Z9GHbs-3lLHja8zEqSOTY2jplr8dpIXjbegPXhN867IbJtC33LscneHh27U0bBLmLfnMydohny7YicUu0eU_nrOPx4f36XMxmz-9TO9mRQ9K5sJqgSUJLVeNnCBYQJKmAUOr0iitCGu1MtqKlcZGaQ1VqQd7VWltJ1pILc7Z9V9vj8lgZ4fvxqVlH90W434JQtVSVhPxC9SjZlY</recordid><startdate>20020801</startdate><enddate>20020801</enddate><creator>PARK, Sang-Wook</creator><creator>KIM, Dong-Jin</creator><creator>YANG, Hong-Seon</creator><creator>LEE, Chan-Ho</creator><creator>LEE, Seung-Cheol</creator><creator>KWAK, Noh-Yeal</creator><creator>SHIN, Seung-Woo</creator><creator>PARK, Jeong-Hwan</creator><creator>SUH, Min-Suk</creator><creator>KONG, Young-Taek</creator><creator>DONG, Cha-Deok</creator><general>Electrochemical Society</general><scope>IQODW</scope></search><sort><creationdate>20020801</creationdate><title>Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects</title><author>PARK, Sang-Wook ; KIM, Dong-Jin ; YANG, Hong-Seon ; LEE, Chan-Ho ; LEE, Seung-Cheol ; KWAK, Noh-Yeal ; SHIN, Seung-Woo ; PARK, Jeong-Hwan ; SUH, Min-Suk ; KONG, Young-Taek ; DONG, Cha-Deok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p185t-f93a0e395b756a1f1ae5c71ceb0c898ea48bc9f3b9a789912090e32299f693593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Metal-semiconductor-metal structures</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PARK, Sang-Wook</creatorcontrib><creatorcontrib>KIM, Dong-Jin</creatorcontrib><creatorcontrib>YANG, Hong-Seon</creatorcontrib><creatorcontrib>LEE, Chan-Ho</creatorcontrib><creatorcontrib>LEE, Seung-Cheol</creatorcontrib><creatorcontrib>KWAK, Noh-Yeal</creatorcontrib><creatorcontrib>SHIN, Seung-Woo</creatorcontrib><creatorcontrib>PARK, Jeong-Hwan</creatorcontrib><creatorcontrib>SUH, Min-Suk</creatorcontrib><creatorcontrib>KONG, Young-Taek</creatorcontrib><creatorcontrib>DONG, Cha-Deok</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PARK, Sang-Wook</au><au>KIM, Dong-Jin</au><au>YANG, Hong-Seon</au><au>LEE, Chan-Ho</au><au>LEE, Seung-Cheol</au><au>KWAK, Noh-Yeal</au><au>SHIN, Seung-Woo</au><au>PARK, Jeong-Hwan</au><au>SUH, Min-Suk</au><au>KONG, Young-Taek</au><au>DONG, Cha-Deok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>2002-08-01</date><risdate>2002</risdate><volume>149</volume><issue>8</issue><spage>G441</spage><epage>G445</epage><pages>G441-G445</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1485083</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-4651 |
| ispartof | Journal of the Electrochemical Society, 2002-08, Vol.149 (8), p.G441-G445 |
| issn | 0013-4651 1945-7111 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_13845526 |
| source | IOP Publishing Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-semiconductor-metal structures Physics |
| title | Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T17%3A14%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Boron%20transport%20through%20surface%20channel%20pMOS%20using%20W-poly%20metal%20gate%20electrode:%20Poly%20Si%20doping%20condition%20and%20nitric%20oxide%20treatment%20effects&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=PARK,%20Sang-Wook&rft.date=2002-08-01&rft.volume=149&rft.issue=8&rft.spage=G441&rft.epage=G445&rft.pages=G441-G445&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1485083&rft_dat=%3Cpascalfrancis%3E13845526%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |