Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of the Electrochemical Society 2002-08, Vol.149 (8), p.G441-G445
Hauptverfasser:	PARK, Sang-Wook, KIM, Dong-Jin, YANG, Hong-Seon, LEE, Chan-Ho, LEE, Seung-Cheol, KWAK, Noh-Yeal, SHIN, Seung-Woo, PARK, Jeong-Hwan, SUH, Min-Suk, KONG, Young-Taek, DONG, Cha-Deok
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-semiconductor-metal structures Physics
Online-Zugang:	Volltext
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