Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(0 0 1) substrate

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Hauptverfasser:	UENO, K, TOKUCHI, S, SAIKI, K, KOMA, A
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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ISSN:	0022-0248 1873-5002