Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition
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| container_volume | 237-39 |
| creator | KAKUNO, Kosuke ITO, Daisuke FUJIMURA, Norifumi MATSUI, Toshiyuki ITO, Taichiro |
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| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_13747155</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>13747155</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_137471553</originalsourceid><addsrcrecordid>eNqNik1PwzAQRC0EEuHjP-ylxwg7aUjvqJQbh_bSU7U4trrIsa1dR9B_TyrRey8zo_fmRlVm1bd1p3Vzq6o5m1o3y9W9ehD51lqbV6MrNW44_ZQjZE7WiQDGASgWxx4tYQApPNkysYPkwWUq-HvG--azfdkSlCNF8BRGgcHlJFTcAF8nyFOQeQUUxxdDKT6pO4-zef7vR7V4X-_ePuqMYjF4xmhJDplpRD4dTNsve9N17bW_P2bmTTA</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>KAKUNO, Kosuke ; ITO, Daisuke ; FUJIMURA, Norifumi ; MATSUI, Toshiyuki ; ITO, Taichiro</creator><creatorcontrib>KAKUNO, Kosuke ; ITO, Daisuke ; FUJIMURA, Norifumi ; MATSUI, Toshiyuki ; ITO, Taichiro</creatorcontrib><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Niobates, titanates, tantalates, pzt ceramics, etc ; Physics</subject><ispartof>Journal of crystal growth, 2002, Vol.237-39, p.487-491</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,778,782,787,788,4038,4039,23917,23918,25127</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=13747155$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KAKUNO, Kosuke</creatorcontrib><creatorcontrib>ITO, Daisuke</creatorcontrib><creatorcontrib>FUJIMURA, Norifumi</creatorcontrib><creatorcontrib>MATSUI, Toshiyuki</creatorcontrib><creatorcontrib>ITO, Taichiro</creatorcontrib><title>Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition</title><title>Journal of crystal growth</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Niobates, titanates, tantalates, pzt ceramics, etc</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqNik1PwzAQRC0EEuHjP-ylxwg7aUjvqJQbh_bSU7U4trrIsa1dR9B_TyrRey8zo_fmRlVm1bd1p3Vzq6o5m1o3y9W9ehD51lqbV6MrNW44_ZQjZE7WiQDGASgWxx4tYQApPNkysYPkwWUq-HvG--azfdkSlCNF8BRGgcHlJFTcAF8nyFOQeQUUxxdDKT6pO4-zef7vR7V4X-_ePuqMYjF4xmhJDplpRD4dTNsve9N17bW_P2bmTTA</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>KAKUNO, Kosuke</creator><creator>ITO, Daisuke</creator><creator>FUJIMURA, Norifumi</creator><creator>MATSUI, Toshiyuki</creator><creator>ITO, Taichiro</creator><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition</title><author>KAKUNO, Kosuke ; ITO, Daisuke ; FUJIMURA, Norifumi ; MATSUI, Toshiyuki ; ITO, Taichiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_137471553</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Niobates, titanates, tantalates, pzt ceramics, etc</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KAKUNO, Kosuke</creatorcontrib><creatorcontrib>ITO, Daisuke</creatorcontrib><creatorcontrib>FUJIMURA, Norifumi</creatorcontrib><creatorcontrib>MATSUI, Toshiyuki</creatorcontrib><creatorcontrib>ITO, Taichiro</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAKUNO, Kosuke</au><au>ITO, Daisuke</au><au>FUJIMURA, Norifumi</au><au>MATSUI, Toshiyuki</au><au>ITO, Taichiro</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition</atitle><btitle>Journal of crystal growth</btitle><date>2002</date><risdate>2002</risdate><volume>237-39</volume><spage>487</spage><epage>491</epage><pages>487-491</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><cop>Amsterdam</cop><pub>Elsevier</pub></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2002, Vol.237-39, p.487-491 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_13747155 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Niobates, titanates, tantalates, pzt ceramics, etc Physics |
| title | Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T10%3A20%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Growth%20process%20and%20interfacial%20structure%20of%20epitaxial%20Y2O3/Si%20thin%20films%20deposited%20by%20pulsed%20laser%20deposition&rft.btitle=Journal%20of%20crystal%20growth&rft.au=KAKUNO,%20Kosuke&rft.date=2002&rft.volume=237-39&rft.spage=487&rft.epage=491&rft.pages=487-491&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E13747155%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |