Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (/spl lambda/ > 1.17 /spl mu/m) quantum-well lasers

Characteristic temperature coefficients of the threshold current (T/sub 0/) and the external differential quantum efficiency (T/sub 1/) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristic temperature coefficients of the threshold current (T/sub 0/) and the external differential quantum efficiency (T/sub 1/) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold (J/sub th/) and transparency (J/sub tr/) current density, the carrier injection efficiency (/spl eta//sub inj/) and external (/spl eta//sub d/) differential quantum efficiency, the internal loss (/spl alpha//sub i/), and the material gain parameter (g/sub o/). The temperature analysis is performed on low-threshold current density (/spl lambda/ = 1.17-1.19 /spl mu/m) InGaAs-GaAsP-GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for T/sub 0/ and T/sub 1/ are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers.