Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors
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| Veröffentlicht in: | Semiconductor science and technology 2002-06, Vol.17 (6), p.503-509 |
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| container_end_page | 509 |
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| container_issue | 6 |
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| container_title | Semiconductor science and technology |
| container_volume | 17 |
| creator | Cui, Delong Hubbard, Seth M Pavlidis, Dimitris Eisenbach, Andreas Chelli, Cyril |
| description | |
| doi_str_mv | 10.1088/0268-1242/17/6/301 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_pascalfrancis_primary_13695214</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>13695214</sourcerecordid><originalsourceid>FETCH-LOGICAL-c457t-d3b962d8b750d505edc9a85d7e9cd250f8ead6e9398f58d834e31a34d3a73e913</originalsourceid><addsrcrecordid>eNp9kc1OAyEUhYnRxFp9AVdsXLgYB4YZhlma-tdEowt1SygwipkCAbqob-ebSW1TF42ubnLv-U5OzgXgFKMLjBgrUUVZgau6KnFb0pIgvAdGmFBcUFrjfTDaCg7BUYwfCGHMCBqBr-ncC5mg66Fy3tg3KKyCD4-T1ysonVUmGWcjdBbOjXXBpCWUIgSjAxxMr5OZ6xX7aawsftB8nTlbZDOt4NTeisv4szcpT-8HI8XaMrm_qadyQ77rpIOLKSxkWgQNZ8a7QQSYgrDRxORCPAYHvRiiPtnMMXi5uX6e3BX3j7fTyeV9IeumTYUis45Wis3aBqkGNVrJTrBGtbqTqmpQz7RQVHekY33DFCO1JliQWhHREt1hMgbV2lfmQDHonvtg5iIsOUZ89QS-6pivOua45ZTnJ2TobA15EaUY-hxbmvhLEto1Fa6z7nytM85vr7t-3Ks-a4td7T8ZvgHkDKVB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Cui, Delong ; Hubbard, Seth M ; Pavlidis, Dimitris ; Eisenbach, Andreas ; Chelli, Cyril</creator><creatorcontrib>Cui, Delong ; Hubbard, Seth M ; Pavlidis, Dimitris ; Eisenbach, Andreas ; Chelli, Cyril</creatorcontrib><identifier>ISSN: 0268-1242</identifier><identifier>EISSN: 1361-6641</identifier><identifier>DOI: 10.1088/0268-1242/17/6/301</identifier><identifier>CODEN: SSTEET</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Applied sciences ; Bipolar transistors ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronics ; Exact sciences and technology ; Iii-v semiconductors ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Semiconductor science and technology, 2002-06, Vol.17 (6), p.503-509</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c457t-d3b962d8b750d505edc9a85d7e9cd250f8ead6e9398f58d834e31a34d3a73e913</citedby><cites>FETCH-LOGICAL-c457t-d3b962d8b750d505edc9a85d7e9cd250f8ead6e9398f58d834e31a34d3a73e913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0268-1242/17/6/301/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,777,781,27905,27906,53811,53891</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=13695214$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cui, Delong</creatorcontrib><creatorcontrib>Hubbard, Seth M</creatorcontrib><creatorcontrib>Pavlidis, Dimitris</creatorcontrib><creatorcontrib>Eisenbach, Andreas</creatorcontrib><creatorcontrib>Chelli, Cyril</creatorcontrib><title>Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors</title><title>Semiconductor science and technology</title><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductors</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0268-1242</issn><issn>1361-6641</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNp9kc1OAyEUhYnRxFp9AVdsXLgYB4YZhlma-tdEowt1SygwipkCAbqob-ebSW1TF42ubnLv-U5OzgXgFKMLjBgrUUVZgau6KnFb0pIgvAdGmFBcUFrjfTDaCg7BUYwfCGHMCBqBr-ncC5mg66Fy3tg3KKyCD4-T1ysonVUmGWcjdBbOjXXBpCWUIgSjAxxMr5OZ6xX7aawsftB8nTlbZDOt4NTeisv4szcpT-8HI8XaMrm_qadyQ77rpIOLKSxkWgQNZ8a7QQSYgrDRxORCPAYHvRiiPtnMMXi5uX6e3BX3j7fTyeV9IeumTYUis45Wis3aBqkGNVrJTrBGtbqTqmpQz7RQVHekY33DFCO1JliQWhHREt1hMgbV2lfmQDHonvtg5iIsOUZ89QS-6pivOua45ZTnJ2TobA15EaUY-hxbmvhLEto1Fa6z7nytM85vr7t-3Ks-a4td7T8ZvgHkDKVB</recordid><startdate>20020601</startdate><enddate>20020601</enddate><creator>Cui, Delong</creator><creator>Hubbard, Seth M</creator><creator>Pavlidis, Dimitris</creator><creator>Eisenbach, Andreas</creator><creator>Chelli, Cyril</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20020601</creationdate><title>Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors</title><author>Cui, Delong ; Hubbard, Seth M ; Pavlidis, Dimitris ; Eisenbach, Andreas ; Chelli, Cyril</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c457t-d3b962d8b750d505edc9a85d7e9cd250f8ead6e9398f58d834e31a34d3a73e913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Bipolar transistors</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Iii-v semiconductors</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cui, Delong</creatorcontrib><creatorcontrib>Hubbard, Seth M</creatorcontrib><creatorcontrib>Pavlidis, Dimitris</creatorcontrib><creatorcontrib>Eisenbach, Andreas</creatorcontrib><creatorcontrib>Chelli, Cyril</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Semiconductor science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cui, Delong</au><au>Hubbard, Seth M</au><au>Pavlidis, Dimitris</au><au>Eisenbach, Andreas</au><au>Chelli, Cyril</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors</atitle><jtitle>Semiconductor science and technology</jtitle><date>2002-06-01</date><risdate>2002</risdate><volume>17</volume><issue>6</issue><spage>503</spage><epage>509</epage><pages>503-509</pages><issn>0268-1242</issn><eissn>1361-6641</eissn><coden>SSTEET</coden><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0268-1242/17/6/301</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Semiconductor science and technology, 2002-06, Vol.17 (6), p.503-509 |
| issn | 0268-1242 1361-6641 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_13695214 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Bipolar transistors Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronics Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T04%3A51%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Impact%20of%20doping%20and%20MOCVD%20conditions%20on%20minority%20carrier%20lifetime%20of%20zinc-%20and%20carbon-doped%20InGaAs%20and%20its%20applications%20to%20zinc-%20and%20carbon-doped%20InP/InGaAs%20heterostructure%20bipolar%20transistors&rft.jtitle=Semiconductor%20science%20and%20technology&rft.au=Cui,%20Delong&rft.date=2002-06-01&rft.volume=17&rft.issue=6&rft.spage=503&rft.epage=509&rft.pages=503-509&rft.issn=0268-1242&rft.eissn=1361-6641&rft.coden=SSTEET&rft_id=info:doi/10.1088/0268-1242/17/6/301&rft_dat=%3Cpascalfrancis_cross%3E13695214%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |