Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors

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Veröffentlicht in:	Semiconductor science and technology 2002-06, Vol.17 (6), p.503-509
Hauptverfasser:	Cui, Delong, Hubbard, Seth M, Pavlidis, Dimitris, Eisenbach, Andreas, Chelli, Cyril
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronics Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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