Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples

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Veröffentlicht in:	Semiconductor science and technology 2000-04, Vol.15 (4), p.386-389
Hauptverfasser:	Remashan, K, Chua, S J, Ramam, A, Prakash, S, Liu, W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Physics Solid surfaces and solid-solid interfaces Surface cleaning, etching, patterning Surface structure and topography Surface treatments Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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