Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTe PLD films
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creator | GORBACH, T. Ya HOLINEY, R. Yu MATVEEVA, L. A SVECHNIKOV, S. V VENGER, E. F KUZMA, M WISZ, G |
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doi_str_mv | 10.1016/S0921-5107(99)00392-X |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_1310261</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1310261</sourcerecordid><originalsourceid>FETCH-LOGICAL-p97t-80402c35737f44db459f6f04ace08702241f5aa93ee50a985ae1ad33fd3ae9df3</originalsourceid><addsrcrecordid>eNo9jMtKAzEUQIMoWKufIGThQhfRm8d0Jkup1QoDCu3CXbmd3LQj8yKJtP17n7g6i3M4jF1KuJUgJ3cLsEqKTEJ-be0NgLZKvB2xkSxyLYw15piN_pNTdhbjOwBIpdSINTPvqUq89zxtiS9qvkNPgQ-BUiBMLXVfsvuRA6ZEoSPH48c6poCJeNuHYds3_ebAsXN8E_pd2n7f5hsp9lO3XxJ_LR-4r5s2nrMTj02kiz-O2fJxtpzORfny9Dy9L8Vg8yQKMKAqneU698a4tcmsn3gwWBEUOShlpM8QrSbKAG2RIUl0WnunkazzesyufrcDxgobH7Cr6rgaQt1iOKyklqAmUn8CQo9cbA</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTe PLD films</title><source>Elsevier ScienceDirect Journals Complete</source><creator>GORBACH, T. Ya ; HOLINEY, R. Yu ; MATVEEVA, L. A ; SVECHNIKOV, S. V ; VENGER, E. F ; KUZMA, M ; WISZ, G</creator><creatorcontrib>GORBACH, T. Ya ; HOLINEY, R. Yu ; MATVEEVA, L. A ; SVECHNIKOV, S. V ; VENGER, E. F ; KUZMA, M ; WISZ, G</creatorcontrib><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/S0921-5107(99)00392-X</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Laser deposition ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2000, Vol.71 (1-3), p.288-291</ispartof><rights>2000 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,780,784,789,790,23930,23931,25140,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1310261$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>GORBACH, T. Ya</creatorcontrib><creatorcontrib>HOLINEY, R. Yu</creatorcontrib><creatorcontrib>MATVEEVA, L. A</creatorcontrib><creatorcontrib>SVECHNIKOV, S. V</creatorcontrib><creatorcontrib>VENGER, E. F</creatorcontrib><creatorcontrib>KUZMA, M</creatorcontrib><creatorcontrib>WISZ, G</creatorcontrib><title>Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTe PLD films</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNo9jMtKAzEUQIMoWKufIGThQhfRm8d0Jkup1QoDCu3CXbmd3LQj8yKJtP17n7g6i3M4jF1KuJUgJ3cLsEqKTEJ-be0NgLZKvB2xkSxyLYw15piN_pNTdhbjOwBIpdSINTPvqUq89zxtiS9qvkNPgQ-BUiBMLXVfsvuRA6ZEoSPH48c6poCJeNuHYds3_ebAsXN8E_pd2n7f5hsp9lO3XxJ_LR-4r5s2nrMTj02kiz-O2fJxtpzORfny9Dy9L8Vg8yQKMKAqneU698a4tcmsn3gwWBEUOShlpM8QrSbKAG2RIUl0WnunkazzesyufrcDxgobH7Cr6rgaQt1iOKyklqAmUn8CQo9cbA</recordid><startdate>20000214</startdate><enddate>20000214</enddate><creator>GORBACH, T. Ya</creator><creator>HOLINEY, R. Yu</creator><creator>MATVEEVA, L. A</creator><creator>SVECHNIKOV, S. V</creator><creator>VENGER, E. F</creator><creator>KUZMA, M</creator><creator>WISZ, G</creator><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>20000214</creationdate><title>Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTe PLD films</title><author>GORBACH, T. Ya ; HOLINEY, R. Yu ; MATVEEVA, L. A ; SVECHNIKOV, S. V ; VENGER, E. F ; KUZMA, M ; WISZ, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p97t-80402c35737f44db459f6f04ace08702241f5aa93ee50a985ae1ad33fd3ae9df3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>GORBACH, T. Ya</creatorcontrib><creatorcontrib>HOLINEY, R. Yu</creatorcontrib><creatorcontrib>MATVEEVA, L. A</creatorcontrib><creatorcontrib>SVECHNIKOV, S. V</creatorcontrib><creatorcontrib>VENGER, E. F</creatorcontrib><creatorcontrib>KUZMA, M</creatorcontrib><creatorcontrib>WISZ, G</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>GORBACH, T. Ya</au><au>HOLINEY, R. Yu</au><au>MATVEEVA, L. A</au><au>SVECHNIKOV, S. V</au><au>VENGER, E. F</au><au>KUZMA, M</au><au>WISZ, G</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTe PLD films</atitle><btitle>Materials science & engineering. B, Solid-state materials for advanced technology</btitle><date>2000-02-14</date><risdate>2000</risdate><volume>71</volume><issue>1-3</issue><spage>288</spage><epage>291</epage><pages>288-291</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/S0921-5107(99)00392-X</doi><tpages>4</tpages></addata></record> |
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source | Elsevier ScienceDirect Journals Complete |
subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Physics |
title | Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1-xCdxTe PLD films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T09%3A07%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Effect%20of%20the%20Si%20wafer%20pretreatment%20on%20the%20patterned%20substrate%20morphology%20and%20growth%20of%20Hg1-xCdxTe%20PLD%20films&rft.btitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=GORBACH,%20T.%20Ya&rft.date=2000-02-14&rft.volume=71&rft.issue=1-3&rft.spage=288&rft.epage=291&rft.pages=288-291&rft.issn=0921-5107&rft.eissn=1873-4944&rft_id=info:doi/10.1016/S0921-5107(99)00392-X&rft_dat=%3Cpascalfrancis%3E1310261%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |