Growth of SiNx and SiCx thin films by pulsed reactive crossed-beam laser ablation
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2000-03, Vol.70 (3), p.323-327 |
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| Sprache: | eng |
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| container_end_page | 327 |
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| container_issue | 3 |
| container_start_page | 323 |
| container_title | Applied physics. A, Materials science & processing |
| container_volume | 70 |
| creator | SPILLMANN, H WILLMOTT, P. R |
| description | |
| doi_str_mv | 10.1007/s003390050054 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0947-8396 |
| ispartof | Applied physics. A, Materials science & processing, 2000-03, Vol.70 (3), p.323-327 |
| issn | 0947-8396 1432-0630 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_1306998 |
| source | SpringerLink Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Laser deposition Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Growth of SiNx and SiCx thin films by pulsed reactive crossed-beam laser ablation |
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