Shaped crystal growth of 50 cm diameter silicon thin-walled cylinders by edge-defined film-fed growth (EFG)

A system for growth of 50cm diameter hollow cylindrical silicon crystals by the edge-defined film-fed growth (EFG) technique has been designed and constructed. Cylinders were grown with lengths up to 1.2m and wall thicknesses ranging from 75 to 300μm. Growth speed limits, effects of stress and mater...

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Veröffentlicht in:	Journal of crystal growth 2001-05, Vol.225 (2-4), p.566-571
Hauptverfasser:	Garcia, D., Ouellette, M., Mackintosh, B., Kalejs, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Stresses A2. Edge-defined film-fed growth B2. Semiconducting Silicon B3. Solar cells Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics
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Zusammenfassung:	A system for growth of 50cm diameter hollow cylindrical silicon crystals by the edge-defined film-fed growth (EFG) technique has been designed and constructed. Cylinders were grown with lengths up to 1.2m and wall thicknesses ranging from 75 to 300μm. Growth speed limits, effects of stress and material characteristics of the cylinders were investigated to evaluate the potential of large diameter EFG systems to provide increased productivity for silicon wafer manufacture.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(01)00954-X