X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2001-05, Vol.34 (10A), p.A25-A29
Hauptverfasser:	Heinke, H, Kirchner, V, Selke, H, Chierchia, R, Ebel, R, Einfeldt, S, Hommel, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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