Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

Transition metals such as Mn generally have large local moments in covalent semiconductors due to their partially filled d shells. However, Mn magnetization in group-IV semiconductors is more complicated than often recognized. Here we report a striking crossover from a quenched Mn moment ( 7 for bot...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2010-10, Vol.82 (16), Article 165202
Hauptverfasser: Zeng, Li, Cao, J. X., Helgren, E., Karel, J., Arenholz, E., Ouyang, Lu, Smith, David J., Wu, R. Q., Hellman, F.
Format: Artikel
Sprache:eng
Schlagworte:
75
COORDINATION NUMBER
ELECTRONIC STRUCTURE
ELECTRONS
HALL EFFECT
INTERSTITIALS
MAGNETISM
MAGNETIZATION
TRANSITION ELEMENTS
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Beschreibung
Zusammenfassung:Transition metals such as Mn generally have large local moments in covalent semiconductors due to their partially filled d shells. However, Mn magnetization in group-IV semiconductors is more complicated than often recognized. Here we report a striking crossover from a quenched Mn moment ( 7 for both a-Si and a-Ge.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.82.165202