Robust isothermal electric control of exchange bias at room temperature

Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with high-speed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr 2 O 3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr 2 O 3 single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Néel temperature. The control of magnetic properties by electric fields is key to realizing spintronics devices. The surface of the antiferromagnetic magnetoelectric Cr 2 O 3 is now shown to exhibit room-temperature ferromagnetism, whose direction can be switched by an electric field. This magnetization switches the exchange-bias field with magnetic multilayers grown on Cr 2 O 3 , promising a new route towards room-temperature spintronics devices.