Constraints on Models of Electrical Transport in Optimally Doped La2−xSrxCuO4 from Measurements of Radiation-Induced Defect Resistance

Precise measurements of the temperature dependence of additional resistivity caused by defect scattering were used to constrain models of carrier transport in La 1.84 Sr 0.16 CuO 4 . Where previous magnetotransport studies have delineated two distinct scattering processes, proportional to T and T 2...

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Veröffentlicht in:	Journal of superconductivity and novel magnetism 2010-02, Vol.23 (3), p.339-342
Hauptverfasser:	Clayhold, J. A., Pelleg, O., Ingram, D. C., Bollinger, A. T., Logvenov, G., Rench, D. W., Kerns, B. M., Schroer, M. D., Sundling, R. J., Bozovic, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Condensed Matter Physics CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: electronic structure, electrical, magnetic, and optical properties DEFECTS Exact sciences and technology Magnetic Materials Magnetism Original Paper Physics Physics and Astronomy Properties of type I and type II superconductors SCATTERING Strongly Correlated Systems Superconductivity TEMPERATURE DEPENDENCE TRANSPORT Transport properties (electric and thermal conductivity, thermoelectric effects, etc.)
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Zusammenfassung:	Precise measurements of the temperature dependence of additional resistivity caused by defect scattering were used to constrain models of carrier transport in La 1.84 Sr 0.16 CuO 4 . Where previous magnetotransport studies have delineated two distinct scattering processes, proportional to T and T 2 , respectively, the new defect scattering results suggest strongly that the two processes act as parallel conductance channels.
ISSN:	1557-1939 1557-1947
DOI:	10.1007/s10948-009-0580-8