Electron Hall mobility in GaAsBi
We present measurements of the electron Hall mobility in n -type GaAs 1 − x Bi x epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ( ≥ 1.6 % ) some degradation of the electron mobility w...
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| Veröffentlicht in: | Journal of applied physics 2009-08, Vol.106 (4), p.043705-043705-3 |
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| container_end_page | 043705-3 |
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| container_issue | 4 |
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| container_title | Journal of applied physics |
| container_volume | 106 |
| creator | Kini, R. N. Bhusal, L. Ptak, A. J. France, R. Mascarenhas, A. |
| description | We present measurements of the electron Hall mobility in
n
-type
GaAs
1
−
x
Bi
x
epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration
(
≥
1.6
%
)
some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism. |
| doi_str_mv | 10.1063/1.3204670 |
| format | Article |
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n
-type
GaAs
1
−
x
Bi
x
epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration
(
≥
1.6
%
)
some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3204670</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>Basic Sciences ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; ELECTRON MOBILITY ; ELECTRONS ; MATERIALS SCIENCE ; SCATTERING ; SOLAR ENERGY</subject><ispartof>Journal of applied physics, 2009-08, Vol.106 (4), p.043705-043705-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c411t-3383a72fb8d937fbfa91276ee0a6782c1106e7f0c4e797ccbf55e4faaa541b343</citedby><cites>FETCH-LOGICAL-c411t-3383a72fb8d937fbfa91276ee0a6782c1106e7f0c4e797ccbf55e4faaa541b343</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3204670$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76127,76133</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/975381$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kini, R. N.</creatorcontrib><creatorcontrib>Bhusal, L.</creatorcontrib><creatorcontrib>Ptak, A. J.</creatorcontrib><creatorcontrib>France, R.</creatorcontrib><creatorcontrib>Mascarenhas, A.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Electron Hall mobility in GaAsBi</title><title>Journal of applied physics</title><description>We present measurements of the electron Hall mobility in
n
-type
GaAs
1
−
x
Bi
x
epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration
(
≥
1.6
%
)
some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.</description><subject>Basic Sciences</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>ELECTRON MOBILITY</subject><subject>ELECTRONS</subject><subject>MATERIALS SCIENCE</subject><subject>SCATTERING</subject><subject>SOLAR ENERGY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAURS0EEqEw8AdhZEh5L7Zje0EqVWmRKrHAbDnGFkZpjGIv_XsSpR2Z7nJ0de8h5B5hidDQJ1zSGlgj4IIUCFJVgnO4JAVAjZVUQl2Tm5R-ABAlVQUpN52zeYh9uTNdVx5iG7qQj2Xoy61ZpZdwS6686ZK7O-WCfL5uPta7av--fVuv9pVliLmiVFIjat_KL0WFb71RWIvGOTCNkLXFcZ0THixzQglrW8-5Y94Ywxm2lNEFeZh7Y8pBJxuys9829v04TyvBqcSReZwZO8SUBuf17xAOZjhqBD3d16hP90f2eWanKpND7P-Hzw705EDPDugfdXZfmw</recordid><startdate>20090815</startdate><enddate>20090815</enddate><creator>Kini, R. N.</creator><creator>Bhusal, L.</creator><creator>Ptak, A. J.</creator><creator>France, R.</creator><creator>Mascarenhas, A.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20090815</creationdate><title>Electron Hall mobility in GaAsBi</title><author>Kini, R. N. ; Bhusal, L. ; Ptak, A. J. ; France, R. ; Mascarenhas, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-3383a72fb8d937fbfa91276ee0a6782c1106e7f0c4e797ccbf55e4faaa541b343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Basic Sciences</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>ELECTRON MOBILITY</topic><topic>ELECTRONS</topic><topic>MATERIALS SCIENCE</topic><topic>SCATTERING</topic><topic>SOLAR ENERGY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kini, R. N.</creatorcontrib><creatorcontrib>Bhusal, L.</creatorcontrib><creatorcontrib>Ptak, A. J.</creatorcontrib><creatorcontrib>France, R.</creatorcontrib><creatorcontrib>Mascarenhas, A.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kini, R. N.</au><au>Bhusal, L.</au><au>Ptak, A. J.</au><au>France, R.</au><au>Mascarenhas, A.</au><aucorp>National Renewable Energy Lab. (NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron Hall mobility in GaAsBi</atitle><jtitle>Journal of applied physics</jtitle><date>2009-08-15</date><risdate>2009</risdate><volume>106</volume><issue>4</issue><spage>043705</spage><epage>043705-3</epage><pages>043705-043705-3</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We present measurements of the electron Hall mobility in
n
-type
GaAs
1
−
x
Bi
x
epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration
(
≥
1.6
%
)
some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3204670</doi><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2009-08, Vol.106 (4), p.043705-043705-3 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_975381 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Basic Sciences CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRON MOBILITY ELECTRONS MATERIALS SCIENCE SCATTERING SOLAR ENERGY |
| title | Electron Hall mobility in GaAsBi |
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