Electron Hall mobility in GaAsBi

Electron Hall mobility in GaAsBi

We present measurements of the electron Hall mobility in n -type GaAs 1 − x Bi x epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ( ≥ 1.6 % ) some degradation of the electron mobility w...

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Veröffentlicht in:Journal of applied physics 2009-08, Vol.106 (4), p.043705-043705-3
Hauptverfasser: Kini, R. N., Bhusal, L., Ptak, A. J., France, R., Mascarenhas, A.
Format: Artikel
Sprache:eng
Schlagworte:
Basic Sciences
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELECTRON MOBILITY
ELECTRONS
MATERIALS SCIENCE
SCATTERING
SOLAR ENERGY
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Zusammenfassung:We present measurements of the electron Hall mobility in n -type GaAs 1 − x Bi x epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ( ≥ 1.6 % ) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3204670