Column-by-column compositional mapping by Z-contrast imaging

A phenomenological method is developed to determine the composition of materials, with atomic column resolution, by analysis of integrated intensities of aberration-corrected Z-contrast scanning transmission electron microscopy images. The method is exemplified for InAs x P 1− x alloys using epitaxi...

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Veröffentlicht in:	Ultramicroscopy 2009, Vol.109 (2), p.172-176
Hauptverfasser:	Molina, S.I., Sales, D.L., Galindo, P.L., Fuster, D., González, Y., Alén, B., González, L., Varela, M., Pennycook, S.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHEMICAL COMPOSITION Compositional mapping High-resolution electron microscopy INDIUM ARSENIDES INDIUM PHOSPHIDES MATERIALS SCIENCE NANOSCIENCE AND NANOTECHNOLOGY QUANTUM WIRES SCANNING ELECTRON MICROSCOPY SUBSTRATES THIN FILMS TRANSMISSION ELECTRON MICROSCOPY Z-contrast imaging
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Beschreibung
Zusammenfassung:	A phenomenological method is developed to determine the composition of materials, with atomic column resolution, by analysis of integrated intensities of aberration-corrected Z-contrast scanning transmission electron microscopy images. The method is exemplified for InAs x P 1− x alloys using epitaxial thin films with calibrated compositions as standards. Using this approach we have determined the composition of the two-dimensional wetting layer formed between self-assembled InAs quantum wires on InP(0 0 1) substrates.
ISSN:	0304-3991 1879-2723
DOI:	10.1016/j.ultramic.2008.10.008