A stable mid-IR, GaSb-based diode laser source for the cryogenic target layering at the Omega Laser Facility

A stable mid-IR, GaSb-based diode laser source for the cryogenic target layering at the Omega Laser Facility

A stable 3-microm-wavelength, GaSb-based diode operated at room temperature has been investigated as a potential laser source for cryogenic target layering at the Omega Laser Facility for inertial confinement fusion (ICF) experiments. More than 50 mW of output power has been achieved at 14 degrees C...

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Veröffentlicht in:Optics express 2009-08, Vol.17 (18), p.15760-15765
Hauptverfasser: Okishev, A V, Westerfeld, D, Shterengas, L, Belenky, G
Format: Artikel
Sprache:eng
Schlagworte:
diode lasers
ENGINEERING
infrared and fara-infrared lasers
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Zusammenfassung:A stable 3-microm-wavelength, GaSb-based diode operated at room temperature has been investigated as a potential laser source for cryogenic target layering at the Omega Laser Facility for inertial confinement fusion (ICF) experiments. More than 50 mW of output power has been achieved at 14 degrees C with high spectral and output-power stability.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.17.015760