Breakdown limits on Gigavolt-per-meter electron-beam-driven wakefields in dielectric structures

First measurements of the breakdown threshold in a dielectric subjected to GV/m wakefields produced by short (30-330 fs), 28.5 GeV electron bunches have been made. Fused silica tubes of 100 microm inner diameter were exposed to a range of bunch lengths, allowing surface dielectric fields up to 27 GV...

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Veröffentlicht in:Physical review letters 2008-05, Vol.100 (21), p.214801-214801, Article 214801
Hauptverfasser: Thompson, M C, Badakov, H, Cook, A M, Rosenzweig, J B, Tikhoplav, R, Travish, G, Blumenfeld, I, Hogan, M J, Ischebeck, R, Kirby, N, Siemann, R, Walz, D, Muggli, P, Scott, A, Yoder, R B
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Sprache:eng
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Zusammenfassung:First measurements of the breakdown threshold in a dielectric subjected to GV/m wakefields produced by short (30-330 fs), 28.5 GeV electron bunches have been made. Fused silica tubes of 100 microm inner diameter were exposed to a range of bunch lengths, allowing surface dielectric fields up to 27 GV/m to be generated. The onset of breakdown, detected through light emission from the tube ends, is observed to occur when the peak electric field at the dielectric surface reaches 13.8+/-0.7 GV/m. The correlation of structure damage to beam-induced breakdown is established using an array of postexposure inspection techniques.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.100.214801