High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Synchrotron x-ray topography with a high-resolution setup using 1128 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading-edge dislocation according to Burgers vector direction were observed. The four types of threading-edge dislocation images were calculated by computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated.