Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy

Bi was investigated as a possible surfactant for growth of GaAs 1− x N x layers on (1 0 0) GaAs substrates by molecular beam epitaxy (MBE) using a radio frequency (RF) plasma nitrogen source. Importantly, Bi extends the useable growth conditions producing smoother surfaces to a significantly higher...

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Veröffentlicht in:	Journal of crystal growth 2007-06, Vol.304 (2), p.402-406
Hauptverfasser:	Liu, Ting, Chandril, Sandeep, Ptak, A.J., Korakakis, D., Myers, T.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Doping A1. Surface processes A3. Molecular beam epitaxy B2. Semiconducting III–V materials BERYLLIUM BISMUTH Cross-disciplinary physics: materials science rheology Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy MOLECULAR BEAM EPITAXY Molecular, atomic, ion, and chemical beam epitaxy Other semiconductors Physics SOLAR ENERGY Solar Energy - Photovoltaics Specific materials SURFACTANTS Theory and models of film growth Thermal instruments, apparatus and techniques Thermometry
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