Optical bloch waves in a semiconductor photonic lattice

We have observed multiple optical Bloch waves in a semiconductor photonic lattice. This photonic lattice comprises epitaxial quarter-wave periodic layers surrounding a periodic quantum-well region. After growth, the layers are structured laterally into periodic square unit cells by reactive-ion-beam...

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Veröffentlicht in:Applied physics letters 1992-06, Vol.60 (22), p.2714-2716
Hauptverfasser: GOURLEY, P. L, WARREN, M. E, VAWTER, G. A, BRENNAN, T. M, HAMMONS, B. E
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Sprache:eng
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Zusammenfassung:We have observed multiple optical Bloch waves in a semiconductor photonic lattice. This photonic lattice comprises epitaxial quarter-wave periodic layers surrounding a periodic quantum-well region. After growth, the layers are structured laterally into periodic square unit cells by reactive-ion-beam etching. When photoexcited, the lattice emits a complex angular distribution of photons that reflects its periodic structure. Scattered light is distributed according to the Laue conditions in analogy with x-ray diffraction from a bulk crystal. Optical Bloch waves photostimulated in the lattice are analogous to electron Bloch waves in an atomic lattice. These optical Bloch waves exhibit long-range translational symmetry and local symmetry due to the shape of the unit cell. Interestingly, the far-field pattern of stimulated emission gives a direct mapping of the allowed Bloch wave vectors in the Brillouin zone. The mapping exhibits a wave-vector gap at the Bragg condition and may be associated with a photonic energy gap. In addition to measuring the intensity distribution of these Bloch waves, we directly measure the phase of the wave by polarization shearing interferometry.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106853