Interface formation and growth of InSb on Si(100)

High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4{degree} off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410 {degree}C, we examined the In, Sb, and...

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Veröffentlicht in:	Physical review. B, Condensed matter Condensed matter, 1992-02, Vol.45 (7), p.3426-3434
Hauptverfasser:	FRAKLIN, G. E, RICH, D. H, HONG, H, MILLER, T, CHIANG, T.-C
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 - Other Materials- Structure & Phase Studies ANTIMONIDES ANTIMONY COMPOUNDS AUGER ELECTRON SPECTROSCOPY COHERENT SCATTERING Condensed matter: structure, mechanical and thermal properties CRYSTALS DIFFRACTION ELECTRON DIFFRACTION ELECTRON SPECTROSCOPY ELEMENTS EMISSION EPITAXY Exact sciences and technology GROWTH INDIUM ANTIMONIDES INDIUM COMPOUNDS INTERFACES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MONOCRYSTALS PHOTOEMISSION Physics PNICTIDES SCATTERING SECONDARY EMISSION SEMIMETALS SILICON Solid surfaces and solid-solid interfaces SPECTROSCOPY Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology X-RAY DIFFRACTION
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Beschreibung
Zusammenfassung:	High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4{degree} off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410 {degree}C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.
ISSN:	0163-1829 1095-3795
DOI:	10.1103/physrevb.45.3426