Crosshatched surface morphology in strained III-V semiconductor films

The correlation between the surface crosshatched morphology and the interfacial misfit dislocations in strained III-V semiconductor heteroepitaxy has been studied. The surface pattern is clearly seen on samples grown at high temperature (520 °C) and those with small lattice-mismatched (f

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1990-05, Vol.67 (9), p.4093-4098
Hauptverfasser:	CHANG, K. H, GIBALA, R, SROLOVITZ, D. J, BHATTACHARYA, P. K, MANSFIELD, J. F
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties ARSENIC COMPOUNDS ARSENIDES Condensed matter: structure, mechanical and thermal properties CRYSTAL DEFECTS CRYSTAL STRUCTURE DISLOCATIONS ELECTRON MICROSCOPY EPITAXY Exact sciences and technology GALLIUM ARSENIDES GALLIUM COMPOUNDS GROWTH INDIUM ARSENIDES INDIUM COMPOUNDS INTERFACES INTERFERENCE LINE DEFECTS MATERIALS SCIENCE MICROSCOPY MOLECULAR BEAM EPITAXY MORPHOLOGY Physics PNICTIDES SCANNING ELECTRON MICROSCOPY Solid surfaces and solid-solid interfaces STRAINS Surface and interface dynamics and vibrations SURFACES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology TUNNEL EFFECT
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Beschreibung
Zusammenfassung:	The correlation between the surface crosshatched morphology and the interfacial misfit dislocations in strained III-V semiconductor heteroepitaxy has been studied. The surface pattern is clearly seen on samples grown at high temperature (520 °C) and those with small lattice-mismatched (f
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.344968