The effect of annealing treatment on the distribution of deuterium in silicon and in silicon/silicon oxide systems

In this paper the effect of annealing treatment on the distribution of deuterium in silicon and silicon/silicon oxide systems is studied. The concentration of deuterium implanted into Si decreases as the annealing temperature increases and finally drops to the background level at 600{degrees}C. In a silicon/silicon oxide system, the concentration of implanted deuterium in oxides also decreases as the annealing temperature increases, and drops to the background level at 900{degrees}C. The diffusion coefficient of deuterium in silicon oxide was estimated to be D(T) = 1.0 {times} 10{sup {minus}2} exp ({minus}1.9 eV k{sub B}T) cm{sup 2}/s.