Growth phases of ZnTe on GaSb(100)

Synchrotron-radiation photoemission was used to study the high- and low-temperature growth phases of ZnTe on GaSb(100). The deconvoluted core-level line shapes were used to construct structural models for the interface between these two compound semiconductors. In addition, the movement of the valen...

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Veröffentlicht in:	Physical review. B, Condensed matter Condensed matter, 1992-08, Vol.46 (7), p.3940-3947
Hauptverfasser:	FRANKLIN, G. E, MILLER, T, CHIANG, T.-C
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 - Other Materials- Structure & Phase Studies ANTIMONIDES ANTIMONY COMPOUNDS BREMSSTRAHLUNG CHALCOGENIDES CHEMICAL REACTIONS CHEMISORPTION Condensed matter: electronic structure, electrical, magnetic, and optical properties CRYSTAL GROWTH ELECTROMAGNETIC RADIATION Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures EMISSION ENERGY LEVELS EPITAXY Exact sciences and technology FERMI LEVEL GALLIUM ANTIMONIDES GALLIUM COMPOUNDS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHASE TRANSFORMATIONS PHOTOEMISSION Physics PNICTIDES RADIATIONS SECONDARY EMISSION SEPARATION PROCESSES SORPTION SORPTIVE PROPERTIES Surface and interface electron states SURFACE PROPERTIES SYNCHROTRON RADIATION TELLURIDES TELLURIUM COMPOUNDS TEMPERATURE DEPENDENCE TEMPERATURE RANGE TEMPERATURE RANGE 0065-0273 K TEMPERATURE RANGE 0400-1000 K ZINC COMPOUNDS ZINC TELLURIDES
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Zusammenfassung:	Synchrotron-radiation photoemission was used to study the high- and low-temperature growth phases of ZnTe on GaSb(100). The deconvoluted core-level line shapes were used to construct structural models for the interface between these two compound semiconductors. In addition, the movement of the valence band and Fermi level was used to examine the heterojunction band offset for the low-temperature phase and the dopant incorporation for the high-temperature phase.
ISSN:	0163-1829 1095-3795
DOI:	10.1103/PhysRevB.46.3940