Fabrication and properties of Nb/Al, Al sub ox /Nb Josephson tunnel junctions with a double-oxide barrier

Fabrication and properties of Nb/Al, Al sub ox /Nb Josephson tunnel junctions with a double-oxide barrier

High-quality Nb/Al, Al{sub ox}/Nb Josephson tunnel junctions using double-oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high-quality junctions. Typ...

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Veröffentlicht in:Journal of applied physics 1990-02, Vol.67:4
Hauptverfasser: Houwman, E.P., Veldhuis, D., Flokstra, J., Rogalla, H.
Format: Artikel
Sprache:eng
Schlagworte:
426001 - Engineering- Superconducting Devices & Circuits- (1990-)
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRITICAL CURRENT
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
NIOBIUM
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SUPERCONDUCTING JUNCTIONS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENTS
ULTRALOW TEMPERATURE
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Beschreibung
Zusammenfassung:High-quality Nb/Al, Al{sub ox}/Nb Josephson tunnel junctions using double-oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high-quality junctions. Typically, gap voltages of 2.8--3.0 mV and {ital V}{sub {ital m}} up to 70 mV at 4.2 K were obtained.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.345579