Optical properties of fractal quantum wells

Optical properties of fractal quantum wells

Fractal quantum wells were grown by metalorganic vapor phase epitaxy. Light absorption and transport/relaxation of charge carriers in fractally-layered semiconductors were studied. Optical and transport properties of these quantum wells are found to be substantially different from those of conventio...

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Veröffentlicht in:Applied physics letters 1993-04, Vol.62 (15), p.1736-1738
Hauptverfasser: GOURLEY, P. L, TIGGES, C. P, SCHNEIDER, R. P, BRENNAN, T. M, HAMMONS, B. E, MCDONALD, A. E
Format: Artikel
Sprache:eng
Schlagworte:
360601 > Other Materials-- Preparation & Manufacture
ABSORPTION SPECTRA
Absorption spectroscopy
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
Band structure
Charge carriers
Condensed matter: electronic structure, electrical, magnetic, and optical properties
COUPLING
Electron transport properties
ELECTRON-HOLE COUPLING
ELECTRONIC STRUCTURE
Energy gap
Epitaxial growth
Exact sciences and technology
FABRICATION
FRACTALS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LUMINESCENCE
MATERIALS SCIENCE
OPTICAL PROPERTIES
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
Physics
PNICTIDES
Relaxation processes
SEMICONDUCTOR JUNCTIONS
SPECTRA 360606 > Other Materials-- Physical Properties-- (1992-)
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Beschreibung
Zusammenfassung:Fractal quantum wells were grown by metalorganic vapor phase epitaxy. Light absorption and transport/relaxation of charge carriers in fractally-layered semiconductors were studied. Optical and transport properties of these quantum wells are found to be substantially different from those of conventional quantum wells (single or periodic). Possible applications of fractally-grown materials are outlined.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.109590