Properties of closely spaced independently addressable lasers fabricated by impurity-induced disordering

We describe the fabrication and characteristics of closely spaced (10 μm) dual-beam laser sources by the process of impurity-induced disordering. We present data demonstrating that these devices are capable of high efficiency and reliable operation when operated in a p-side up configuration. We also show that these devices can be placed in close proximity with a minimal amount of thermal and electrical interaction between devices. These features have significant implications for the realization of high-density arrays of independently addressable lasers for optical interconnection of integrated circuits and optical imaging systems.