Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO/sub 3

Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO/sub 3/ is reported. Energy transfer efficiencies up to 80% were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-li...

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Veröffentlicht in:IEEE photonics technology letters 1990-08, Vol.2 (8), p.568-570
Hauptverfasser: Verdiell, J.M., Rajbenbach, H., Huignard, J.P.
Format: Artikel
Sprache:eng
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Zusammenfassung:Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO/sub 3/ is reported. Energy transfer efficiencies up to 80% were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-limited beam was obtained on the combined beam. Crystal response time of the order of a few seconds was measured.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.58051