Efficient diffraction-limited beam combining of semiconductor laser diode arrays using photorefractive BaTiO/sub 3
Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO/sub 3/ is reported. Energy transfer efficiencies up to 80% were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-li...
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Veröffentlicht in: | IEEE photonics technology letters 1990-08, Vol.2 (8), p.568-570 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Beam combining of 820-nm-wavelength laser diodes using two-wave mixing in BaTiO/sub 3/ is reported. Energy transfer efficiencies up to 80% were obtained with an index-guided diode. Efficient beam combining of two injection-locked laser arrays was demonstrated. Nearly 100 mW power in a diffraction-limited beam was obtained on the combined beam. Crystal response time of the order of a few seconds was measured.< > |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/68.58051 |