Photoemission and scanning-tunneling-microscopy study of GaSb(100)

Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1{times}3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the {Gamma}-{Delta}-{ital X} direction. The deconvoluted Sb 4{ital d} and Ga 3{ital d} core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.