Growth of In[sub 2]O[sub 3] thin films by atomic layer epitaxy
Simultaneously occurring transparency and electrical conductivity give rise to numerous thin film applications for indium oxide doped with tin (ITO), e.g., as transparent electrodes in flat panel displays and electrochromic windows, as active and passive components in photovoltaic devices, and as lo...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1994-11, Vol.141:11 |
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| container_title | Journal of the Electrochemical Society |
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| creator | Asikainen, T. Ritala, M. Leskelae, M. |
| description | Simultaneously occurring transparency and electrical conductivity give rise to numerous thin film applications for indium oxide doped with tin (ITO), e.g., as transparent electrodes in flat panel displays and electrochromic windows, as active and passive components in photovoltaic devices, and as long wavelength IR radiation reflecting heat mirror layers in energy saving windows. Indium oxide thin films were deposited by atomic layer epitaxy technique at 400 and 500 C using InCl[sub 3] and water as reactants. The films were characterized by means of X-ray diffraction, Rutherford backscattering spectrometry, nuclear reaction analysis, scanning electron microscopy, and by optical and electrical measurements. The highest deposition rate obtained was only 0.27 [angstrom]/cycle. The films were polycrystalline In[sub 2]O[sub 3] having the [100] direction as the most pronounced orientation. The resistivities of the highly transparent films were in the order of 3 [times] 10[sup [minus]3] [Omega]-cm. |
| doi_str_mv | 10.1149/1.2059303 |
| format | Article |
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Indium oxide thin films were deposited by atomic layer epitaxy technique at 400 and 500 C using InCl[sub 3] and water as reactants. The films were characterized by means of X-ray diffraction, Rutherford backscattering spectrometry, nuclear reaction analysis, scanning electron microscopy, and by optical and electrical measurements. The highest deposition rate obtained was only 0.27 [angstrom]/cycle. The films were polycrystalline In[sub 2]O[sub 3] having the [100] direction as the most pronounced orientation. The resistivities of the highly transparent films were in the order of 3 [times] 10[sup [minus]3] [Omega]-cm.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.2059303</identifier><language>eng</language><publisher>United States</publisher><subject>CHALCOGENIDES ; CHLORIDES ; CHLORINE COMPOUNDS ; COATINGS ; DATA ; ELECTRIC CONDUCTIVITY ; ELECTRICAL PROPERTIES ; EPITAXY ; EXPERIMENTAL DATA ; FLUIDS ; GASES ; GLASS ; HALIDES ; HALOGEN COMPOUNDS ; INDIUM CHLORIDES ; INDIUM COMPOUNDS ; INDIUM OXIDES ; INFORMATION ; MATERIALS SCIENCE ; MICROSTRUCTURE ; NUMERICAL DATA ; OXIDES ; OXYGEN COMPOUNDS ; PHYSICAL PROPERTIES ; USES ; VAPORS 360601 -- Other Materials-- Preparation & Manufacture ; WATER VAPOR</subject><ispartof>Journal of the Electrochemical Society, 1994-11, Vol.141:11</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/6734636$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Asikainen, T.</creatorcontrib><creatorcontrib>Ritala, M.</creatorcontrib><creatorcontrib>Leskelae, M.</creatorcontrib><title>Growth of In[sub 2]O[sub 3] thin films by atomic layer epitaxy</title><title>Journal of the Electrochemical Society</title><description>Simultaneously occurring transparency and electrical conductivity give rise to numerous thin film applications for indium oxide doped with tin (ITO), e.g., as transparent electrodes in flat panel displays and electrochromic windows, as active and passive components in photovoltaic devices, and as long wavelength IR radiation reflecting heat mirror layers in energy saving windows. Indium oxide thin films were deposited by atomic layer epitaxy technique at 400 and 500 C using InCl[sub 3] and water as reactants. The films were characterized by means of X-ray diffraction, Rutherford backscattering spectrometry, nuclear reaction analysis, scanning electron microscopy, and by optical and electrical measurements. The highest deposition rate obtained was only 0.27 [angstrom]/cycle. The films were polycrystalline In[sub 2]O[sub 3] having the [100] direction as the most pronounced orientation. The resistivities of the highly transparent films were in the order of 3 [times] 10[sup [minus]3] [Omega]-cm.</description><subject>CHALCOGENIDES</subject><subject>CHLORIDES</subject><subject>CHLORINE COMPOUNDS</subject><subject>COATINGS</subject><subject>DATA</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRICAL PROPERTIES</subject><subject>EPITAXY</subject><subject>EXPERIMENTAL DATA</subject><subject>FLUIDS</subject><subject>GASES</subject><subject>GLASS</subject><subject>HALIDES</subject><subject>HALOGEN COMPOUNDS</subject><subject>INDIUM CHLORIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>INDIUM OXIDES</subject><subject>INFORMATION</subject><subject>MATERIALS SCIENCE</subject><subject>MICROSTRUCTURE</subject><subject>NUMERICAL DATA</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>PHYSICAL PROPERTIES</subject><subject>USES</subject><subject>VAPORS 360601 -- Other Materials-- Preparation & Manufacture</subject><subject>WATER VAPOR</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNqNyrsKwjAUgOEgCtbL4Bsc3FtzmrS1i4t4m1zcpJQ2pDTSJtJEtG-viA_g9PHDT8gCaYDI0xUGIY1SRtmAeJjyyE8QcUg8SpH5PI5wTCbW3j6Ja554ZHPozNPVYCo46at9lBBm568sA1crDZVqWgtlD4UzrRLQFL3sQN6VK179jIyqorFy_nNKlvvdZXv0jXUqt0I5KWphtJbC5XHCeMxi9tf0Bl8bO_w</recordid><startdate>19941101</startdate><enddate>19941101</enddate><creator>Asikainen, T.</creator><creator>Ritala, M.</creator><creator>Leskelae, M.</creator><scope>OTOTI</scope></search><sort><creationdate>19941101</creationdate><title>Growth of In[sub 2]O[sub 3] thin films by atomic layer epitaxy</title><author>Asikainen, T. ; Ritala, M. ; Leskelae, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_67346363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>CHALCOGENIDES</topic><topic>CHLORIDES</topic><topic>CHLORINE COMPOUNDS</topic><topic>COATINGS</topic><topic>DATA</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRICAL PROPERTIES</topic><topic>EPITAXY</topic><topic>EXPERIMENTAL DATA</topic><topic>FLUIDS</topic><topic>GASES</topic><topic>GLASS</topic><topic>HALIDES</topic><topic>HALOGEN COMPOUNDS</topic><topic>INDIUM CHLORIDES</topic><topic>INDIUM COMPOUNDS</topic><topic>INDIUM OXIDES</topic><topic>INFORMATION</topic><topic>MATERIALS SCIENCE</topic><topic>MICROSTRUCTURE</topic><topic>NUMERICAL DATA</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>PHYSICAL PROPERTIES</topic><topic>USES</topic><topic>VAPORS 360601 -- Other Materials-- Preparation & Manufacture</topic><topic>WATER VAPOR</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Asikainen, T.</creatorcontrib><creatorcontrib>Ritala, M.</creatorcontrib><creatorcontrib>Leskelae, M.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Asikainen, T.</au><au>Ritala, M.</au><au>Leskelae, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of In[sub 2]O[sub 3] thin films by atomic layer epitaxy</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1994-11-01</date><risdate>1994</risdate><volume>141:11</volume><issn>0013-4651</issn><eissn>1945-7111</eissn><abstract>Simultaneously occurring transparency and electrical conductivity give rise to numerous thin film applications for indium oxide doped with tin (ITO), e.g., as transparent electrodes in flat panel displays and electrochromic windows, as active and passive components in photovoltaic devices, and as long wavelength IR radiation reflecting heat mirror layers in energy saving windows. Indium oxide thin films were deposited by atomic layer epitaxy technique at 400 and 500 C using InCl[sub 3] and water as reactants. The films were characterized by means of X-ray diffraction, Rutherford backscattering spectrometry, nuclear reaction analysis, scanning electron microscopy, and by optical and electrical measurements. The highest deposition rate obtained was only 0.27 [angstrom]/cycle. The films were polycrystalline In[sub 2]O[sub 3] having the [100] direction as the most pronounced orientation. The resistivities of the highly transparent films were in the order of 3 [times] 10[sup [minus]3] [Omega]-cm.</abstract><cop>United States</cop><doi>10.1149/1.2059303</doi></addata></record> |
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| language | eng |
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| source | IOP Publishing Journals |
| subjects | CHALCOGENIDES CHLORIDES CHLORINE COMPOUNDS COATINGS DATA ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES EPITAXY EXPERIMENTAL DATA FLUIDS GASES GLASS HALIDES HALOGEN COMPOUNDS INDIUM CHLORIDES INDIUM COMPOUNDS INDIUM OXIDES INFORMATION MATERIALS SCIENCE MICROSTRUCTURE NUMERICAL DATA OXIDES OXYGEN COMPOUNDS PHYSICAL PROPERTIES USES VAPORS 360601 -- Other Materials-- Preparation & Manufacture WATER VAPOR |
| title | Growth of In[sub 2]O[sub 3] thin films by atomic layer epitaxy |
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