Growth of In[sub 2]O[sub 3] thin films by atomic layer epitaxy

Simultaneously occurring transparency and electrical conductivity give rise to numerous thin film applications for indium oxide doped with tin (ITO), e.g., as transparent electrodes in flat panel displays and electrochromic windows, as active and passive components in photovoltaic devices, and as long wavelength IR radiation reflecting heat mirror layers in energy saving windows. Indium oxide thin films were deposited by atomic layer epitaxy technique at 400 and 500 C using InCl[sub 3] and water as reactants. The films were characterized by means of X-ray diffraction, Rutherford backscattering spectrometry, nuclear reaction analysis, scanning electron microscopy, and by optical and electrical measurements. The highest deposition rate obtained was only 0.27 [angstrom]/cycle. The films were polycrystalline In[sub 2]O[sub 3] having the [100] direction as the most pronounced orientation. The resistivities of the highly transparent films were in the order of 3 [times] 10[sup [minus]3] [Omega]-cm.