Excitonic effects in gain and index in GaAlAs quantum well lasers

Spontaneous emission and gain measurements in GaAlAs single quantum well lasers are presented. The gain is derived from the spontaneous emission detected through an opening in the top metallic contact of the lasers. Excitonic effects are seen in the gain (absorption) spectra for low carrier densitie...

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Veröffentlicht in:	Applied physics letters 1990-07, Vol.57 (2), p.123-125
Hauptverfasser:	KESLER, M. P, HARDER, C
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS AMPLIFICATION ARSENIC COMPOUNDS ARSENIDES CARRIER DENSITY Condensed matter: electronic structure, electrical, magnetic, and optical properties CORRELATIONS Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ENGINEERING Exact sciences and technology EXCITONS GAIN GALLIUM ARSENIDES GALLIUM COMPOUNDS LASERS LINE WIDTHS NONLINEAR OPTICS OPTICAL PROPERTIES OPTICS PHYSICAL PROPERTIES Physics PNICTIDES QUASI PARTICLES REFRACTIVITY SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-) Surface and interface electron states
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Zusammenfassung:	Spontaneous emission and gain measurements in GaAlAs single quantum well lasers are presented. The gain is derived from the spontaneous emission detected through an opening in the top metallic contact of the lasers. Excitonic effects are seen in the gain (absorption) spectra for low carrier densities, and the step-like nature of the two-dimensional density of states is evident. From the gain spectra, refractive index changes are derived via a Kramers–Kronig transformation, and this is used to evaluate the linewidth enhancement factor as a function of photon energy.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.103962