Molecular dynamics of silicon indentation

Molecular dynamics of silicon indentation

We use nonequilibrium molecular dynamics to simulate the elastic-plastic deformation of silicon under tetrahedral nanometer-sized indentors. The results are described in terms of a rate-dependent and temperature-dependent phenomenological yield strength. We follow the structural change during indent...

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1993-04, Vol.47 (13), p.7705-7709
Hauptverfasser: KALLMAN, J. S, HOOVER, W. G, HOOVER, C. G, DE GROOT, A. J, LEE, S. M, WOOTEN, F
Format: Artikel
Sprache:eng
Schlagworte:
BRITTLENESS
COMPUTERIZED SIMULATION
Condensed matter: structure, mechanical and thermal properties
DEFORMATION
ELASTICITY
ELEMENTS
Exact sciences and technology
MATERIALS SCIENCE
Mechanical and acoustical properties of condensed matter
MECHANICAL PROPERTIES
Mechanical properties of solids
Physics
PLASTICITY
SEMIMETALS
SILICON
SIMULATION
TEMPERATURE DEPENDENCE
TENSILE PROPERTIES 360603 > Materials-- Properties
Tribology and hardness
YIELD STRENGTH
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Beschreibung
Zusammenfassung:We use nonequilibrium molecular dynamics to simulate the elastic-plastic deformation of silicon under tetrahedral nanometer-sized indentors. The results are described in terms of a rate-dependent and temperature-dependent phenomenological yield strength. We follow the structural change during indentation with a computer technique that allows us to model the dynamic simulation of diffraction patterns.
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.47.7705